symbol v ds v gs i dm t j , t stg symbol typ max 70 90 100 125 r jl 63 80 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage -30 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -2.2 -20 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.4 1 -55 to 150 t a =70c i d -2.6 features v ds (v) = -30v i d = -2.6 a (v gs = -10v) r ds(on) < 130m ? (v gs = -10v) r ds(on) < 180m ? (v gs = -4.5v) r ds(on) < 260m ? (v gs = -2.5v) the AO3403 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product AO3403 is pb-free (meets rohs & sony 259 specifications). AO3403l is a green product ordering option. AO3403 and AO3403l are electrically identical. s g d to-236 (sot-23) to p vie w g d s p-channel enhancement mode field AO3403 effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.6 -1 -1.4 v i d(on) -10 a 102 130 t j =125c 154 200 128 180 m ? 187 260 m ? g fs 3 4.5 s v sd -0.85 -1 v i s -2 a c iss 409 500 pf c oss 55 pf c rss 42 pf r g 12 16 ? q g 4.4 5.3 nc q gs 0.8 nc q gd 1.32 nc t d(on) 5.3 8 ns t r 4.4 9 ns t d(off) 31.5 45 ns t f 816ns t rr 15.8 19 ns q rr 812nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-2.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-2.6a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-2a i s =-1a,v gs =0v v ds =-5v, i d =-2.5a i f =-2.5a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-2.5a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =6 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 5: june 2005 p-channel enhancement mode field AO3403 effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 0 5 10 15 20 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3.5v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 50 100 150 200 250 0123456 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m : ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-2.5v 0 50 100 150 200 250 300 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m : ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-2a -4v v gs =-2.5v v gs =-4.5v -2.0v -5v p-channel enhancement mode field AO3403 effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0 1 2 3 4 5 012345 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0 .1 s 1 s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-2.5a single pulse d=t on /t t j,pk =t a +p dm .z t ja .r t ja r t ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s p-channel enhancement mode field AO3403 effect transistor www.freescale.net.cn 4 / 4
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